3-1 rHRU100120 100a, 1200v hyperfast diode the rHRU100120 is a hyperfast diode with soft recovery characteristics (t rr < 90ns). it has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as a freewheeling/clamping diode and recti?r in a variety of switching power supplies and other power switching applications. its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. formerly developmental type ta49070. symbol features hyperfast with soft recovery . . . . . . . . . . . . . . . . . . <90ns operating temperature. . . . . . . . . . . . . . . . . . . . . . .175 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200v avalanche energy rated planar construction applications switching power supplies power switching circuits general purpose packaging jedec style to-218 ordering information part number package brand rHRU100120 to-218 rhr100120 note: when ordering, use the entire part number. k a anode cathode (flange) absolute maximum ratings t c = 25 o c, unless otherwise speci?d rHRU100120 units peak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 1200 v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v rwm 1200 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 1200 v average recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(av) 100 a (t c = 62.5 o c) repetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i frm 200 a (square wave, 20khz) nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i fsm 1000 a (halfwave, 1 phase, 60hz) maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 300 w avalanche energy (see figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .e avl 50 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j -65 to 175 o c data sheet january 2000 file number 3145.3 1-888-intersil or 321-724-7143 | copyright intersil corporation 2000
3-2 electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition min typ max units v f i f = 100a - - 3.2 v i f = 100a, t c = 150 o c - - 2.6 v i r v r = 1200v - - 250 a v r = 1200v, t c = 150 o c- - 2ma t rr i f = 1a, di f /dt = 100a/ s- - 90ns i f = 100a, di f /dt = 100a/ s - - 100 ns t a i f = 100a, di f /dt = 100a/ s - 60 - ns t b i f = 100a, di f /dt = 100a/ s - 25 - ns r jc - - 0.5 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (see figure 6), summation of t a + t b . t a = time to reach peak reverse current (see figure 6). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 6). r jc = thermal resistance junction to case. pw = pulse width. d = duty cycle. typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage v f , forward voltage (v) 1 500 100 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 o c 100 o c 175 o c i f , forward current (a) v r , reverse voltage (v) 0 200 400 600 800 1000 1200 1000 100 0.01 0.1 1 10 175 o c 100 o c 25 o c i r , reverse current ( a) rHRU100120
3-3 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com figure 3. t rr ,t a and t b curves vs forward current figure 4. current derating curve typical performance curves (continued) i f , forward current (a) t, recovery times (ns) 1 0 75 100 125 150 10 t rr t a t b 50 25 100 t c = 25 o c, di f /dt = 100a/ s 100 20 0 25 50 75 100 150 175 125 40 60 80 dc t c , case temperature ( o c) i f(av) , average forward current (a) sq. wave test circuits and waveforms figure 5. t rr test circuit figure 6. t rr waveforms and definitions figure 7. avalanche energy test circuit figure 8. avalanche current and voltage waveforms r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i max = 1.6a l = 40mh iv t 0 t 1 t 2 i l v avl t i l rHRU100120
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